Factory Lead Time  

13 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

12 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

23A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

45W Tc

Series  

HEXFET®

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Published  

2003

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

45mOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

30V

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

260

Current Rating  

23A

Time@Peak Reflow Temperature-Max (s)  

30

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

38W

Case Connection  

DRAIN

Turn On Delay Time  

8.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

45m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

450pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 4.5V

Rise Time  

140ns

Vgs (Max)  

±16V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

23A

Threshold Voltage  

1V

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

30V

Pulsed Drain Current-Max (IDM)  

96A

Dual Supply Voltage  

30V

Avalanche Energy Rating (Eas)  

77 mJ

Nominal Vgs  

1 V

Width  

2.3876mm

Height  

6.22mm

Length  

6.7056mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free